Jump to content

Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

← Older editNewer edit →
VisualWikitext
Mdyma (talk | contribs)
danchip
584 edits
No edit summary
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,330 edits
No edit summary
Line 2: Line 2:




The furnace A4 phosphorus Predep (A4) can be used to predeposition silicon wafers with phosphorus doping (N-type). The silicon wafers are positioned in a quarts boat.
The Phosphorus Predep furnace (A4) can be used for predeposition of silicon wafers with phosphorus doping (N-type). In the furnace, the silicon wafers are positioned in a quarts boat.


'''
'''
==Test of Phosphorus Predep furnace==
==Test of the Phosphorus Predep furnace==
'''
'''
'''
'''
Line 11: Line 11:
'''  
'''  


To study the coherence between the temperature for the predeposition process and dive-in of the doping with phosphorus in DTU-Danchip Phosphorus Predep furnace (A4).  
To study the coherence between the temperature for the predeposition process and drive-in of the doping with phosphorus in the Phosphorus Predep furnace (A4) at DTU Danchip.  


'''
'''


====Experiment setup====
====Experimental setup====
'''
'''
20 boron doped wafers (p-type) was used. Four wafer to each of the five different predeposition temperatures. In the furnace was there five dummy wafers on each side of the processed wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized.  
20 boron doped wafers (p-type) was used. Four wafer to each of the five different predeposition temperatures. In the furnace was there five dummy wafers on each side of the processed wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized.  
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Dope_with_Phosphorus"