Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
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There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same wafer after a BHF etch. | There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same wafer after a BHF etch. | ||
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|+ '''Measurement after | |+ '''Measurement after Predeposition''' | ||
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|[[image:Resistivity.png|400x400px|right|thumb|Resistivity]]||[[image:Sheet_resistance.png|400x400px|right|thumb|Sheet resistance]] | |||
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|[[image:SIMS Measurement_After_Pre-dep.png|400x400px|right|thumb|SIMS Measurement After Pre-dep]]||[[image:SIMS Measurement_After_Drive-in_Process_at_1050_C.png|400x400px|right|thumb|SIMS Measurement After Drive-in Process at 1050 C]] | |||
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Looking at the 'SIMS Measurement after Drive-in Process at 1050 C' it can be seen that 'Pre-dep at 950 C' and 'Pre-dep at 1000 C' are crossing each other but they should not do that. There have only been meassured on one wafer so there is not that mush statistical data to verify it with. | |||