Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
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These wafers was dipped in BHF to get the phosphorus glass layer of before the Drive-in process. The Drive-in process was made in Danchip Phosphorus Drive-in furnace (A3). There was a dummy wafer in between the wafers from different temperatures so doping from wafer to wafer was minimized. The Drive-in was done with the process "DRY1050" with is a dry oxidation at 1050 <sup>o</sup>C for 100 minutes and 20 minutes annealing. At the oxdation was the O<sub>2</sub> flow was 5 SLM and N<sub>2</sub> flow for annealing was 3 SLM. | These wafers was dipped in BHF to get the phosphorus glass layer of before the Drive-in process. The Drive-in process was made in Danchip Phosphorus Drive-in furnace (A3). There was a dummy wafer in between the wafers from different temperatures so doping from wafer to wafer was minimized. The Drive-in was done with the process "DRY1050" with is a dry oxidation at 1050 <sup>o</sup>C for 100 minutes and 20 minutes annealing. At the oxdation was the O<sub>2</sub> flow was 5 SLM and N<sub>2</sub> flow for annealing was 3 SLM. | ||
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[[image:Resistivity.png|400x400px|right|thumb|Resistivity]] | [[image:Resistivity.png|400x400px|right|thumb|Resistivity]] | ||