Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
No edit summary |
|||
| Line 54: | Line 54: | ||
There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same after a BHF etch. | There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same wafer after a BHF etch. | ||
| Line 61: | Line 61: | ||
|- | |- | ||
! | ! | ||
! colspan="2" | | ! | ||
! colspan="2" | Ellipsometer (center point only) | |||
! colspan="2" | Four Point Probe | ! colspan="2" | Four Point Probe | ||
|- | |- | ||
! width="130" | Wafer # | ! width="130" | Wafer # | ||
! width="130" | Temperature [C] | |||
! width="130" | Thinkness [nm] | ! width="130" | Thinkness [nm] | ||
! width="130" | Refrative index | ! width="130" | Refrative index | ||
| Line 71: | Line 73: | ||
|- | |- | ||
! 3 | ! 3 | ||
| 850 | |||
| 27,4 | | 27,4 | ||
| 1,4623 | | 1,4623 | ||
| Line 77: | Line 80: | ||
|- | |- | ||
! 7 | ! 7 | ||
| 900 | |||
| 45,27 | | 45,27 | ||
| 1,4622 | | 1,4622 | ||
| Line 83: | Line 87: | ||
|- | |- | ||
! 11 | ! 11 | ||
| 950 | |||
| 61,36 | | 61,36 | ||
| 1,4625 | | 1,4625 | ||
| Line 89: | Line 94: | ||
|- | |- | ||
! 15 | ! 15 | ||
| 1000 | |||
| 80,45 | | 80,45 | ||
| 1,4624 | | 1,4624 | ||
| Line 95: | Line 101: | ||
|- | |- | ||
! 19 | ! 19 | ||
| 1050 | |||
| 119,37 | | 119,37 | ||
| 1,4623 | | 1,4623 | ||
| Line 107: | Line 114: | ||
|- | |- | ||
! | ! | ||
! | |||
! colspan="2" | Avg. five point on Filmtek | ! colspan="2" | Avg. five point on Filmtek | ||
! colspan="2" | Four Point Probe | ! colspan="2" | Four Point Probe | ||
|- | |- | ||
! width="130" | Wafer # | ! width="130" | Wafer # | ||
! width="130" | Temperature [C] | |||
! width="130" | Thinkness [nm] | ! width="130" | Thinkness [nm] | ||
! width="130" | Refrative index | ! width="130" | Refrative index | ||
| Line 117: | Line 126: | ||
|- | |- | ||
! 2 | ! 2 | ||
| 850 | |||
| 110,44 | | 110,44 | ||
| 1,4654 | | 1,4654 | ||
| Line 123: | Line 133: | ||
|- | |- | ||
! 6 | ! 6 | ||
| 900 | |||
| 116,28 | | 116,28 | ||
| 1,4629 | | 1,4629 | ||
| Line 129: | Line 140: | ||
|- | |- | ||
! 9 | ! 9 | ||
| 950 | |||
| 137,06 | | 137,06 | ||
| 1,4604 | | 1,4604 | ||
| Line 135: | Line 147: | ||
|- | |- | ||
! 14 | ! 14 | ||
| 1000 | |||
| 141,46 | | 141,46 | ||
| 1,4651 | | 1,4651 | ||
| Line 141: | Line 154: | ||
|- | |- | ||
! 18 | ! 18 | ||
| 1050 | |||
| 139,87 | | 139,87 | ||
| 1,4659 | | 1,4659 | ||
| Line 147: | Line 161: | ||
|- | |- | ||
! Test | ! Test | ||
| | |||
| 110,71 | | 110,71 | ||
| 1,46286 | | 1,46286 | ||
Revision as of 11:19, 17 October 2013
Feedback to this page: click here
The furnace A4 phosphorus predep(N-predep) can be used to predeposit silicon wafers with phosphor. The silicon wafers are positioned in a quarts boat. Phosphor is predeposited in the silicon wafers.
In preparation
THIS PAGE IS UNDER CONSTRUCTION
Test of Phosphorus Predep furnace
Purpose
To study the coherence between the temperature of the Predep and dive-in for doping with phosphorus in DTU-Danchip Phosphorus Predep furnace (A4).
Experiment setup
There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized.
| Run # | Temperature | Process time with POCl3 | Anneal time in N2 | Wafer # |
|---|---|---|---|---|
| 1 | 850 oC | 15 minutes | 20 miuntes | 1, 2, 3, 4 |
| 2 | 900 oC | 15 minutes | 20 miuntes | 5, 6, 7, 8 |
| 3 | 950 oC | 15 minutes | 20 miuntes | 9, 10, 11, 12 |
| 4 | 1000 oC | 15 minutes | 20 miuntes | 13, 14, 15, 16 |
| 5 | 1050 oC | 15 minutes | 20 miuntes | 17, 18, 19, 20 |
After the Predep was two wafer from each run taken out to be further processed. The wafers was 1, 2, 5, 6, 9, 10, 13, 14, 17, 18.
These wafers was dipped in BHF to get the phosphorus glass layer of before the Drive-in process. The Drive-in process was made in Danchip Phosphorus Drive-in furnace (A3). There was a dummy wafer in between the wafers from different temperatures so doping from wafer to wafer was minimized. The Drive-in was done with the process "DRY1050" with is a dry oxidation at 1050 oC for 100 minutes and 20 minutes annealing. At the oxdation was the O2 flow was 5 SLM and N2 flow for annealing was 3 SLM.
Test measurement
There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same wafer after a BHF etch.
| Ellipsometer (center point only) | Four Point Probe | ||||
|---|---|---|---|---|---|
| Wafer # | Temperature [C] | Thinkness [nm] | Refrative index | Sheet resistance [Ωsq] | Slice Resistivity [Ωcm] |
| 3 | 850 | 27,4 | 1,4623 | 311 | 17,32 |
| 7 | 900 | 45,27 | 1,4622 | 138,5 | 7,61 |
| 11 | 950 | 61,36 | 1,4625 | 16,12 | 0,859 |
| 15 | 1000 | 80,45 | 1,4624 | 7,4 | 0,392 |
| 19 | 1050 | 119,37 | 1,4623 | 6,6 | 0,246 |
| Avg. five point on Filmtek | Four Point Probe | ||||
|---|---|---|---|---|---|
| Wafer # | Temperature [C] | Thinkness [nm] | Refrative index | Sheet resistance [Ωsq] | Slice Resistivity [Ωcm] |
| 2 | 850 | 110,44 | 1,4654 | 189,7 | 13,06 |
| 6 | 900 | 116,28 | 1,4629 | 101,6 | 5,32 |
| 9 | 950 | 137,06 | 1,4604 | 10,05 | 0,527 |
| 14 | 1000 | 141,46 | 1,4651 | 4,72 | 0,216 |
| 18 | 1050 | 139,87 | 1,4659 | 3,23 | 0,165 |
| Test | 110,71 | 1,46286 | - | - | |