Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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 *[[/Making Mask design#Alignment_marks|Alignment marks]]
+==Alignment marks==
+Following alignment marks are suggested to use on the EVG620 automatic aligner for good pattern recognition. Pleased be adviced that they can be removed in KOH etching.
+*[[Media:Alignmentkeys2.cif|Alignment marks 2 .cif]] - ''You need the program "Clewin" to open this file''
+*[[Media:Alignmentkeys2.tdb|Alignment marks 2 .tdb]] - ''You need the program "L-Edit" to open this file''
+====External links====
+*[http://www.wieweb.com Clewin download]
+===Alignment marks location===
+* KS Aligner MA6
+* Aligner 6inch EVG620
+The mask's alignment marks for 4inch process:
+BSA must be located  between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and  exactly at 45mm in left and right in horizontal location (x=+-45mm).
+TSA must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.
+The mask's alignment marks for 6inch process:
+Both BSA and TSA must be located  between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.
+Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.
+* EVG NIL imprint aligner
 *[[/Making Mask design#How_to_order_a_mask|How to order a mask]]