Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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== EVG Aligner ==
== EVG Aligner ==
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[[Image:EVG620.jpg|300x300px|thumb|right|Aligner-6inch EVG620 is placed in Cleanroom 13.]]
[[Image:EVG620.jpg|300x300px|thumb|right|Aligner-6inch EVG620 is placed in Cleanroom 13.]]

Revision as of 13:26, 3 October 2013

UV Exposure Comparison Table

Equipment KS Aligner EVG Aligner III-V Aligner Inclined UV Lamp
Purpose
  • TS and BS Alignment
  • UV exposure
  • TS and BS Alignment
  • UV exposure
  • TS Alignment
  • UV exposure
  • UV exposure
Performance Minimum feature size
  • 1.25µm down to 1.0µm
  • 1.25µm
  • 2µm
Exposure light/filters/spectrum
  • 350W Hg-lamp
  • 365 nm notch filter, intensity in Constant Intensity mode: 7mW/cm2 @ 365 nm
  • 303 nm filter optional
  • 350W Hg-lamp
  • SU8 filter (long-pass), intensity in Constant Power mode: 7mW/cm2 @ 365 nm
  • 365 nm filter optional
  • 350W Hg-lamp
  • the hole spectrum of 350W hg-lamp
  • 1000 W Hg(Xe)lamp source
  • near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm)
Exposure mode
  • proximity, soft, hard, vacuum contact
  • proximity, soft, hard, vacuum contact
  • proximity, soft, hard, vacuum contact
  • Flood exposure
  • Proximity exposure with home-made chuck and maskholder
Process parameter range Positive Process
  • dose 42mW/cm2 for 1,5um AZ5214E resist
  • dose 56mW/cm2 for 2,2um AZ5214E resist
  • dose 23mW/cm2 for 1,5um AZ5214E resist
  • dose 35mW/cm2 for 2,2um AZ5214E resist
  • polymer depended
Negative Process
  • dose 21mW/cm2 for 1,5um AZ5214E resist
  • dose 28mW/cm2 for 2,2um AZ5214E resist

then 210mW/cm2 flood exposure after PEB

  • dose 16mW/cm2 for 1,5um AZ5214E resist
  • dose 18mW/cm2 for 2,2um AZ5214E resist

then 210mW/cm2 flood exposure after PEB

  • polymer depended
Substrates Batch size
  • 1 small sample
  • 1 50 mm wafers
  • 1 100 mm wafers
  • 1 150 mm wafers
  • 1 50 mm wafers
  • 1 100 mm wafers
  • 25 150 mm wafers with automatic handling
  • 1 small samples
  • 1 50 mm wafers
  • 1 100 mm wafers
  • 1 150 mm wafers
  • all sizes up to 8inch
Allowed materials
  • All cleanroom materials
  • Dedicated 2inch chuck for III-V materials
  • All cleanroom materials except III-V materials
  • III-V compounds
  • All cleanroom materials


KS Aligner

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The KSaligner MA6 is placed in Cleanroom 3.


SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager


EVG Aligner

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Aligner-6inch EVG620 is placed in Cleanroom 13.

EVG620 aligner is designed for high resolution photolithography. The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates. The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information. Available exposure mode: proximity, soft, hard and vacuum contact. Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager



III-V Aligner

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The SÜSS MicroTec MA1006 mask aligner located in the III-V cleanroom is dedicated for processing of III-V compound semiconductors.

Specific use of the mask aligner can be found in the standard resist recipes.

III-V Aligner positioned in III-V cleanroom
Performance substrate size

small pieces 1x1 cm up to 2inch"

Exposure mode

soft contact, hard contact, proximity, flood exposure

Exposure light/filters

365 nm, 405 nm

Minimum structure size

~1µm

Mask size

5x5inch

Alignment modes

Top side only



Inclined UV Lamp

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Inclined UV lamp is placed in Cleanroom 13.

The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.

The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Danchip workshop.

The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.

The technical specification and the general outline of the equipment can be found in LabManager.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager