Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
| Line 42: | Line 42: | ||
|- | |- | ||
|Recipe name | |Recipe name | ||
|Deposition rate [ | |Deposition rate [µm/min] | ||
|RI | |RI | ||
|Uniformity [%] | |Uniformity [%] | ||
|- | |- | ||
|1oxide | |1oxide/standard | ||
|~193 | |~0.193 | ||
|1.46 | |1.46 | ||
|2 | |2 | ||
|- | |||
|1PBSG | |||
|~0.3 | |||
| | |||
| | |||
|- | |- | ||
|} | |} | ||
==Recipes on PECVD3 for deposition of silicon oxides== | ==Recipes on PECVD3 for deposition of silicon oxides== | ||