Specific Process Knowledge/Lithography/UVExposure: Difference between revisions
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*TS Alignment | *TS Alignment | ||
*UV exposure | *UV exposure | ||
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*UV exposure | |||
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*1.25µm | *1.25µm | ||
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* | * | ||
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* | *1000 W Hg(Xe)lamp source | ||
*near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm) | |||
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*proximity, soft, hard, vacuum contact | *proximity, soft, hard, vacuum contact | ||
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|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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*<nowiki>1</nowiki> small | *<nowiki>1</nowiki> small sample | ||
*<nowiki>1</nowiki> 50 mm wafers | *<nowiki>1</nowiki> 50 mm wafers | ||
*<nowiki>1</nowiki> 100 mm wafers | *<nowiki>1</nowiki> 100 mm wafers | ||