Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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==Inclined UV lamp==
==Inclined UV lamp==
[[Image:Inclined UV lamp_1.jpg|200×200px|right|thumb|Inclined UV lamp is placed in Cleanroom 13.]]
[[Image:Inclined UV lamp_1.jpg|200×200px|left|thumb|Inclined UV lamp is placed in Cleanroom 13.]]


The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.
The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.

Revision as of 10:38, 9 August 2013

UV Exposure Comparison Table

Equipment KS Aligner EVG Aligner III-V Aligner Inclined UV Lamp
Purpose
  • Spinning and baking of AZ5214E resist
  • Spinning and baking of AZ4562 resist
  • Spinning and baking of e-beam resist
  • Spinning and baking of AZ5214E resist
  • Spinning and baking of AZ4562 resist
  • Spinning and baking of SU8 resist
  • In-line substrate HMDS priming
  • Coating and baking of AZ MiR 701 (29cps) resist
  • Coating and baking of AZ nLOF 2020 resist
  • Post-exposure baking at 110°C
Performance Substrate handling
  • Cassette-to-cassette
  • Edge handling chuck
  • Single substrate
  • Non-vacuum chuck for fragile substrates
  • Cassette-to-cassette
Single substrate
Permanent media
  • AZ5214E resist
  • AZ4562 resist
  • Acetone for chuck cleaning
  • Acetone for drip pan
  • AZ5214E resist
  • PGMEA for edge bead removal
  • Acetone for chuck cleaning
  • AZ MiR 701 (29cps) resist
  • AZ nLOF 2020 resist
  • PGMEA for backside rinse and edge-bead removal
  • PGMEA for spinner bowl cleaning and vapor tip bath
Manual dispense option
  • 2 automatic syringes
  • yes
  • pneumatic dispense for SU8 resist
  • no
Process parameter range Spindle speed
  • Range
  • Range
  • 10 - 9990 rpm
  • 10-5000 rpm
Parameter 2
  • Range
  • Range
  • Range
Substrates Batch size
  • 24 50 mm wafers
  • 24 100 mm wafers
  • 24 150 mm wafers
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 25 100 mm wafers
  • Maximum substrate size: 6"
  • Minimum substrate size: 3*3 mm2
  • maximum substrate thickness: 4 mm
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
  • Silicon
  • Glass
  • III-V compound semiconductors
  • Si, SiO2, SOI


KS Aligner

The KSaligner MA6 is placed in Cleanroom 3.

SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager

EVG Aligner

Aligner-6inch EVG620 is placed in Cleanroom 13.

EVG620 aligner is designed for high resolution photolithography. The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates. The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information. Available exposure mode: proximity, soft, hard and vacuum contact. Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager

III-V Aligner

The SÜSS MicroTec MA1006 mask aligner located in the III-V cleanroom is dedicated for processing of III-V compound semiconductors.

Specific use of the mask aligner can be found in the standard resist recipes.

III-V Aligner positioned in III-V cleanroom
Performance substrate size

small pieces 1x1 cm up to 2inch"

Exposure mode

soft contact, hard contact, proximity, flood exposure

Exposure light/filters

365 nm, 405 nm

Minimum structure size

~1µm

Mask size

5x5inch

Alignment modes

Top side only

Inclined UV lamp

Inclined UV lamp is placed in Cleanroom 13.

The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.

The toll was purchased in February 2009 from Newport company. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at Danchip workshop.

The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.

The technical specification and the general outline of the equipment can be found in LabManager.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager