Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
| Line 278: | Line 278: | ||
|Uniformity [%] | |Uniformity [%] | ||
|Stress | |Stress | ||
|Comment | |||
|- | |- | ||
|LFSiO2 | |LFSiO2 | ||
| Line 284: | Line 285: | ||
|~1.5% | |~1.5% | ||
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016'' | |'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016'' | ||
|We have seen that this recipe do not deposit the first minute | |||
|- | |- | ||
|LFSiO | |LFSiO | ||
| Line 290: | Line 292: | ||
|<1 | |<1 | ||
|not measured | |not measured | ||
|. | |||
|- | |- | ||
|1PBSG | |1PBSG | ||
| Line 296: | Line 299: | ||
|~17% | |~17% | ||
|not measured | |not measured | ||
|. | |||
|} | |} | ||
<br clear="all" /> | <br clear="all" /> | ||