Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of SiO2 in E-Beam Evaporator Temescal-2: Difference between revisions
Created page with "<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> All images and photos on this page belongs to <b>DTU Nanolab</b>.<br> The fabrication and characterization described below were conducted in <b>2023</b> by <b>Patama Pholprasit</b> and <b>Evgeniy Shkondin, DTU Nanolab</b>.<br></i> =Evaporation of SiO<sub>2</sub> in Temescal-2= This page describes e-beam evaporation method of SiO<sub>2</sub> in Temescal (10-pocket). E-Beam Ev..." |
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=Evaporation of SiO<sub>2</sub> in Temescal-2= | =Evaporation of SiO<sub>2</sub> in Temescal-2= | ||
This page describes e-beam evaporation method of SiO<sub>2</sub> in | This page describes e-beam evaporation method of SiO<sub>2</sub> in [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|10-pocket e-beam evaporator]]. E-Beam Evaporator (10-pockets) - Temescal-2 allows deposition with elevated temperature and O<sub>2</sub> gas bleed. This is ideal conditions of evaporation of oxides such as SiO<sub>2</sub>, TiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub> and ITO. | ||
<b>We highly recommend adding 5% O<sub>2</sub> and maintaining a temperature of at least 200°C to achieve high-quality stoichiometric SiO<sub>2</sub> films. Under these conditions, you can expect to produce optical films with smooth surfaces, excellent amorphous properties, and strong adhesion. </b> | <b>We highly recommend adding 5% O<sub>2</sub> and maintaining a temperature of at least 200°C to achieve high-quality stoichiometric SiO<sub>2</sub> films. Under these conditions, you can expect to produce optical films with smooth surfaces, excellent amorphous properties, and strong adhesion. </b> | ||