Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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	At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]] page to learn more about the PECVDs at DANCHIP. ~~All though~~ PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.		At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]] page to learn more about the PECVDs at DANCHIP. Allthough PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.