Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
| Line 79: | Line 79: | ||
|N<math>_2</math>O flow [sccm] | |N<math>_2</math>O flow [sccm] | ||
|N2 flow [sccm] | |N2 flow [sccm] | ||
|B2H6 flow [sccm] | |||
|PH3 flow [sccm] | |||
|Pressure [mTorr] | |Pressure [mTorr] | ||
|Power [W] | |Power [W] | ||
| Line 87: | Line 89: | ||
|1420 | |1420 | ||
|392 | |392 | ||
|0 | |||
|0 | |||
|550 | |550 | ||
|60 | |60 | ||
| | |Uniform silicon oxide | ||
|- | |- | ||
|1PBSG | |||
|17 | |||
|1600 | |||
|0 | |||
|135 | |||
|40 | |||
|500 | |||
|800LF | |||
|BPSG glass for waveguide cladding layer | |||
|} | |} | ||
LF=Low Frequency | LF=Low Frequency | ||
===Expected results=== | ===Expected results=== | ||