Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Thermal evaporation of Cr in Thermal evaporator: Difference between revisions

image:eves_20210128_XPS_survey.png|Figure 14. Survey scan of Cr thin film after 580 s. Ar⁺ sputtering. Substrate: Silicon 6" wafer with native oxide.

image:eves_20210128_C1s.png|Figure 15. High resolution of <b>C 1s</b> signal. At the surface native airborne carbon can be observed, the signal disappears immediately after the ion beam is turned on. Substrate: Silicon 6" wafer with native oxide.

image:eves_20210128_Cr2p.png|Figure 16. High resolution <b>Cr 2p</b> signal during the depth profiling. Ar⁺ sputtering proceeds from 0 to 580 s, with 20 s. interval with mid-current and energy of 3000 eV. At the surface, the Cr peak is doubled due the bonding to oxygen and bonding to Cr. After the etching the peak responsible to oxygen bonding becomes neglible. Substrate: Silicon 6" wafer with native oxide.

image:eves_20210128_O1s.png|Figure 17. High resolution of <b>O 1s</b> signal. The signal is obviously strong at the beginning, since the top layer is composed of CrO_x, but it never completely disapears, but it becomes saturated, which means that some level of oxygen is always present. Substrate: Silicon 6" wafer with native oxide.

image:eves_Cr_thermal_evaporation_XPS_depth_profile.png|Figure 18. XPS depth profile. The top surface is oxidized, but the oxygen signal lowers, once getting deeper. Nevertheless, it remains around 10 at.% in the bulk layer. The is a strange nitrogen lower signal. The reason is unknown. Substrate: Silicon 6" wafer with native oxide.