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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,304 edits
Line 81: Line 81:
|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|[[/LF_SiO2 results|more results]]<!-- Comments -->
|[[/LF_SiO2 results|Click for more results]]<!-- Comments -->
|12<!-- SiH4 [sccm] -->
|12<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
Line 99: Line 99:
|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|[[/HF_SiO2 results|Click for more results]<!-- Comments -->
|10<!-- SiH4 [sccm] -->
|10<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
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