Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
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| Line 41: | Line 41: | ||
|- | |- | ||
|Deposition rate | |Deposition rate | ||
| | |70 - 85 nm/min | ||
|- | |- | ||
|Non-uniformity | |Non-uniformity | ||
|< | |<3.0 | ||
|- | |- | ||
|Refractive index | |Refractive index | ||
|1. | |1.474 - 1.486 | ||
|- | |- | ||
|} | |} | ||