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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

Bghe (talk | contribs)
Bghe (talk | contribs)
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|Deposition rate
|Deposition rate
|97 - 112 nm/min
|70 - 85 nm/min
|-
|-
|Non-uniformity
|Non-uniformity
|<2.0
|<3.0
|-
|-
|Refractive index
|Refractive index
|1.467 - 1.474
|1.474 - 1.486
|-
|-
|}
|}