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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,305 edits
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== Deposition of SiO2 with PECVD4 ==
== Deposition of SiO2 with PECVD4 ==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD4 - oxide'''
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD4 - oxide [[Image:section under construction.jpg|70px]] '''
|-
|-
|
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=395 The QC procedure for PECVD4]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]
{| {{table}}
{| {{table}}
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|-  
|-  
|Pressure
|Pressure
|700 mTorr
|550 mTorr
|-
|-
|RF-power
|RF-power
|150 W
|60 W
|-
|-
|}
|}
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