Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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 == Deposition of SiO2 with PECVD4 ==
+{| border="1" cellspacing="2" cellpadding="2" colspan="3"
+|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD4 - oxide'''
+|-
+|
+*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
+*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]
+{| {{table}}
+| align="center" |
+{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
+! QC Recipe:
+! QCOXYD2
+|-
+| SiH<sub>4</sub> flow
+|12 sccm
+|-
+|N<sub>2</sub>O flow
+|1420 sccm
+|-
+|N<sub>2</sub> flow
+|392 sccm
+|-
+|Pressure
+|700 mTorr
+|-
+|RF-power
+|150 W
+|-
+|}
+| align="center" valign="top"|
+{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
+!QC limits
+!PECVD3 - OXIDE
+|-
+|Deposition rate
+|97 - 112 nm/min
+|-
+|Non-uniformity
+|<2.0
+|-
+|Refractive index
+|1.467 - 1.474
+|-
+|}
+|-
+|}
+|}
 {| border="1" cellspacing="2" cellpadding="2"