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<br clear="all" />
<br clear="all" />
=Recipes on PECVD3 for deposition of silicon oxides=
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD3 - oxide'''
|-
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
! QC Recipe:
! QCOXYD2
|-
| SiH<sub>4</sub> flow
|12 sccm
|-
|N<sub>2</sub>O flow
|1420 sccm
|-
|N<sub>2</sub> flow
|392 sccm
|-
|Pressure
|700 mTorr
|-
|RF-power
|150 W
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!PECVD3 - OXIDE
|-
|Deposition rate
|97 - 112 nm/min
|-
|Non-uniformity
|<2.0
|-
|Refractive index
|1.467 - 1.474
|-
|}
|-
|}
|}
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N2 flow [sccm]
|B2H6 flow [sccm]
|PH3 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|LFSiO2
|12
|1420
|392
|0
|0
|700
|150
|New QC implemented in April 2016
|-
|LFSiO
|12
|1420
|392
|0
|0
|550
|60
|Uniform silicon oxide
|-
|1PBSG
|17
|1600
|0
|135
|40
|500
|800LF
|BPSG glass for waveguide cladding layer
|}
LF=Low Frequency
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress
|-
|LFSiO2
|105nm/min
|1.47
|~1.5%
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|-
|LFSiO
|~75
|~1.48
|<1
|not measured
|-
|1PBSG
|~228 nm/min
|.
|~17%
|not measured
|}
<br clear="all" />
=Recipes on PECVD3 for deposition of doped oxide=
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH<sub>4</sub> flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N<sub>2</sub> flow [sccm]
|GeH<sub>4</sub> flow [sccm] (scaled by 100)
|B<sub>2</sub>H<sub>6</sub> flow [sccm]
|PH<sub>3</sub> flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|Core-Ge
|17
|1600
|300
|300
|0
|0
|400
|600 LF
|Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
Annnealing: Anneal bond furnace, recipe "core1100"
|-
|Top-BPSG
|17
|1600
|0
|0
|100
|40
|500
|800 LF
|Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics
Annnealing/oxidation: Anneal bond furnace, recipe "clad1000"
|}
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|Refractive index
|-
|Core-Ge
|~188 nm/min
|~1.46969
|-
|Top-BPSG
|~248 nm/min
|~1.458
|}


=Recipes on PECVD2 for deposition of silicon oxides=
=Recipes on PECVD2 for deposition of silicon oxides=
Line 374: Line 556:


<br clear="all" />
<br clear="all" />
=Recipes on PECVD3 for deposition of silicon oxides=
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD3 - oxide'''
|-
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
! QC Recipe:
! QCOXYD2
|-
| SiH<sub>4</sub> flow
|12 sccm
|-
|N<sub>2</sub>O flow
|1420 sccm
|-
|N<sub>2</sub> flow
|392 sccm
|-
|Pressure
|700 mTorr
|-
|RF-power
|150 W
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!PECVD3 - OXIDE
|-
|Deposition rate
|97 - 112 nm/min
|-
|Non-uniformity
|<2.0
|-
|Refractive index
|1.467 - 1.474
|-
|}
|-
|}
|}
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N2 flow [sccm]
|B2H6 flow [sccm]
|PH3 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|LFSiO2
|12
|1420
|392
|0
|0
|700
|150
|New QC implemented in April 2016
|-
|LFSiO
|12
|1420
|392
|0
|0
|550
|60
|Uniform silicon oxide
|-
|1PBSG
|17
|1600
|0
|135
|40
|500
|800LF
|BPSG glass for waveguide cladding layer
|}
LF=Low Frequency
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress
|-
|LFSiO2
|105nm/min
|1.47
|~1.5%
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|-
|LFSiO
|~75
|~1.48
|<1
|not measured
|-
|1PBSG
|~228 nm/min
|.
|~17%
|not measured
|}
<br clear="all" />
=Recipes on PECVD3 for deposition of doped oxide=
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH<sub>4</sub> flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N<sub>2</sub> flow [sccm]
|GeH<sub>4</sub> flow [sccm] (scaled by 100)
|B<sub>2</sub>H<sub>6</sub> flow [sccm]
|PH<sub>3</sub> flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|Core-Ge
|17
|1600
|300
|300
|0
|0
|400
|600 LF
|Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
Annnealing: Anneal bond furnace, recipe "core1100"
|-
|Top-BPSG
|17
|1600
|0
|0
|100
|40
|500
|800 LF
|Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics
Annnealing/oxidation: Anneal bond furnace, recipe "clad1000"
|}
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|Refractive index
|-
|Core-Ge
|~188 nm/min
|~1.46969
|-
|Top-BPSG
|~248 nm/min
|~1.458
|}




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