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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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At the moment DANCHIP has 2(3) PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 has been decommissioned and PECVD3 are for silicon based processing allowing wafers with small abount of metal (<5% wafer coverage). PECVD2 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD2 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system.
At the moment DANCHIP has 2 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous. PECVD1 and PECVD2 has been decommissioned and now we have PECVD3 and PECVD4. PECVD3 are for silicon based processing allowing wafers with small abount of metal (<5% wafer coverage). PECVD4 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD4 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system.


== Deposition of SiO2 with PECVD4 ==
== Deposition of SiO2 with PECVD4 ==
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