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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 15: Line 15:
!|Comments
!|Comments
!|SiH4 [sccm]
!|SiH4 [sccm]
!|NH3 [sccm]
!|N2O [sccm]
!|N2O [sccm]
!|N2 [sccm]
!|N2 [sccm]
Line 36: Line 35:
|<!-- Comments -->
|<!-- Comments -->
|12<!-- SiH4 [sccm] -->
|12<!-- SiH4 [sccm] -->
|<!-- NH3 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
|392<!-- N2 [sccm] -->
|392<!-- N2 [sccm] -->
Line 55: Line 53:
|<!-- Comments -->
|<!-- Comments -->
|10<!-- SiH4 [sccm] -->
|10<!-- SiH4 [sccm] -->
|<!-- NH3 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
|<!-- N2 [sccm] -->
|<!-- N2 [sccm] -->
Line 74: Line 71:
|<!-- Comments -->
|<!-- Comments -->
|17<!-- SiH4 [sccm] -->
|17<!-- SiH4 [sccm] -->
|<!-- NH3 [sccm] -->
|2000<!-- N2O [sccm] -->
|2000<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|1960<!-- N2 [sccm] -->
Line 93: Line 89:
|Measured after anneal in Clad1000<!-- Comments -->
|Measured after anneal in Clad1000<!-- Comments -->
|17<!-- SiH4 [sccm] -->
|17<!-- SiH4 [sccm] -->
|<!-- NH3 [sccm] -->
|1600<!-- N2O [sccm] -->
|1600<!-- N2O [sccm] -->
|<!-- N2 [sccm] -->
|<!-- N2 [sccm] -->
Line 112: Line 107:
|Measured after anneal in Clad1000 <!-- Comments -->
|Measured after anneal in Clad1000 <!-- Comments -->
|17<!-- SiH4 [sccm] -->
|17<!-- SiH4 [sccm] -->
|<!-- NH3 [sccm] -->
|1600<!-- N2O [sccm] -->
|1600<!-- N2O [sccm] -->
|<!-- N2 [sccm] -->
|<!-- N2 [sccm] -->
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