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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 39: Line 39:
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
|392<!-- N2 [sccm] -->
|392<!-- N2 [sccm] -->
|135<!-- B2H6 -->
|40<!-- PH3 -->
|550 mTorr<!-- Pressure [mTorr] -->
|550 mTorr<!-- Pressure [mTorr] -->
|60LF"<!-- Power [W] -->
|60LF"<!-- Power [W] -->
Line 55: Line 57:
|<!-- NH3 [sccm] -->
|<!-- NH3 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
|392<!-- N2 [sccm] -->
|<!-- N2 [sccm] -->
|<!-- B2H6 -->
|40<!-- PH3 -->
|900 mTorr<!-- Pressure [mTorr] -->
|900 mTorr<!-- Pressure [mTorr] -->
|30HF<!-- Power [W] -->
|30HF<!-- Power [W] -->
Line 73: Line 77:
|2000<!-- N2O [sccm] -->
|2000<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|1960<!-- N2 [sccm] -->
|<!-- B2H6 -->
|<!-- PH3 -->
|300 mTorr<!-- Pressure [mTorr] -->
|300 mTorr<!-- Pressure [mTorr] -->
|700LF<!-- Power [W] -->
|700LF<!-- Power [W] -->
Line 109: Line 115:
|<!-- N2O [sccm] -->
|<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|1960<!-- N2 [sccm] -->
|240<!-- B2H6 -->
|60<!-- PH3 -->
|900 mTorr<!-- Pressure [mTorr] -->
|900 mTorr<!-- Pressure [mTorr] -->
|20 W<!-- Power [W] -->
|20 W<!-- Power [W] -->
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