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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
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|waveguide <!-- Recipe -->
|waveguide <!-- Recipe -->
|12.2-12.4 nm/min<!-- Dep. rate [nm/min] -->
|159.5 nm/min<!-- Dep. rate [nm/min] -->
|2.017-2.021<!-- RI -->
|1.462<!-- RI -->
|&plusmn; 1.2-1.6%<!-- Unif. [%] -->
|&plusmn; 0.8%<!-- Unif. [%] -->
|Tensile: 431.6 MPa<!-- Stress [MPa] -->
|Compressive: 121.9 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|<!-- Comments -->
|40<!-- SiH4 [sccm] -->
|17<!-- SiH4 [sccm] -->
|55<!-- NH3 [sccm] -->
|<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|2000<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|1960<!-- N2 [sccm] -->
|900 mTorr<!-- Pressure [mTorr] -->
|300 mTorr<!-- Pressure [mTorr] -->
|20 W<!-- Power [W] -->
|700LF<!-- Power [W] -->
|<!-- Load -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Tune -->
|10:00/56:00(stress)<!-- Time [mm:ss] -->
|40:00<!-- Time [mm:ss] -->
|February 2017 bghe<!--Tested -->
|February 2017 bghe<!--Tested -->
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