Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
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|waveguide <!-- Recipe --> | |waveguide <!-- Recipe --> | ||
| | |159.5 nm/min<!-- Dep. rate [nm/min] --> | ||
| | |1.462<!-- RI --> | ||
|± | |± 0.8%<!-- Unif. [%] --> | ||
| | |Compressive: 121.9 MPa<!-- Stress [MPa] --> | ||
|<!-- Comments --> | |<!-- Comments --> | ||
| | |17<!-- SiH4 [sccm] --> | ||
| | |<!-- NH3 [sccm] --> | ||
|<!-- N2O [sccm] --> | |2000<!-- N2O [sccm] --> | ||
|1960<!-- N2 [sccm] --> | |1960<!-- N2 [sccm] --> | ||
| | |300 mTorr<!-- Pressure [mTorr] --> | ||
| | |700LF<!-- Power [W] --> | ||
|<!-- Load --> | |<!-- Load --> | ||
|<!-- Tune --> | |<!-- Tune --> | ||
| | |40:00<!-- Time [mm:ss] --> | ||
|February 2017 bghe<!--Tested --> | |February 2017 bghe<!--Tested --> | ||
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