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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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|LF SiO<!-- Recipe -->
|LF SiO<!-- Recipe -->
|12.9-13.0 nm/min<!-- Dep. rate [nm/min] -->
|75-78 nm/min<!-- Dep. rate [nm/min] -->
|2.038-2.044<!-- RI -->
|1.480-1.483<!-- RI -->
|&plusmn; 1.7%<!-- Unif. [%] -->
|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|157 MPa <!-- Stress [MPa] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|<!-- Comments -->
|<!-- Comments -->
|40<!-- SiH4 [sccm] -->
|12<!-- SiH4 [sccm] -->
|40<!-- NH3 [sccm] -->
|<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
|1920<!-- N2 [sccm] -->
|392<!-- N2 [sccm] -->
|900 mTorr<!-- Pressure [mTorr] -->
|550 mTorr<!-- Pressure [mTorr] -->
|20HF6"/20LF2"<!-- Power [W] -->
|60LF"<!-- Power [W] -->
|<!-- Load -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Tune -->
|10:00/60:00(stress)<!-- Time [mm:ss] -->
|1:15/13:00(stress)<!-- Time [mm:ss] -->
|February 2017 bghe<!--Tested -->
|February 2017 bghe<!--Tested -->
|-
|-
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