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LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/EMT Procces flow: Difference between revisions

Eves (talk | contribs)
Eves (talk | contribs)
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|To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma.
|To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma.
|[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2| Plasma Asher 2]]
|[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2| Plasma Asher 2]]
|&nbsp;
|[[image:1_Si.JPG|250x350px|center|]]
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|Deposition carries 7 times in order to get 1 µm thick film
|Deposition carries 7 times in order to get 1 µm thick film
|[[Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_Nitride/Deposition_of_stoichiometric_nitride_using_the_6"_LPCVD_nitride_furnace|6" LPCVD nitride furnace]].  
|[[Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_Nitride/Deposition_of_stoichiometric_nitride_using_the_6"_LPCVD_nitride_furnace|6" LPCVD nitride furnace]].  
|[[image:1 Resist back.jpg|250x350px|center|]]
|[[image:2_SiN_LPCVD.JPG|250x350px|center|]]
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|The best quility wafer selects and cleaves in four pieces.  
|The best quility wafer selects and cleaves in four pieces.  
| [[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical Microscopy]].
| [[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical Microscopy]].
|[[image:Captured_10x19_defects_in_SiN.jpg|250x350px|center|]]
|[[image:3_ALD.JPG|250x350px|center|]]
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