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LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/EMT Procces flow: Difference between revisions

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Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
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|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!2.6
!2.6
|Optical microscope inspection
|XPS inspection for elemental traice analysis
|Check the results of the exposure and development with an optical microscope by inspecting that the pattern and alignment marks are clearly visible. Right image: top view of alignment marks. The alignment marks will be used to align the wafer to the mask in next lithography step (section 5).
|XPS can be used in depth profile mode. Ar+ ions erode the surface of multilayers allowing the inspection of each layers
||The different [[Specific_Process_Knowledge/Characterization/XPS#XPS-ThermoScientific|XPS-ThermoScientific]] [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers#Investigation_of_chemical_composition_in_multilayers_system| XPS results]] and their features are listed.
||Equipment used: [[Specific_Process_Knowledge/Characterization/XPS#XPS-ThermoScientific|XPS-ThermoScientific]] Results of depth profiling presented: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers#Investigation_of_chemical_composition_in_multilayers_system| XPS results]] and their features are listed.
  |[[image:mask1_SiO-etch-2.jpg|150x150px|center]]
  |[[image:mask1_SiO-etch-2.jpg|150x150px|center]]
|-
|-
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