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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 91: Line 91:
{| border="1" style="text-align: center; width: 700px; height: 150px;"
{| border="1" style="text-align: center; width: 700px; height: 150px;"
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1OX_old
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1OX_old
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1SiO2 (as QC)
! colspan="2" style="text-align: left;" style="background: #efefef;" | LFSiO2 (as QC)
|-
|-
!N<math>_2</math>-flow
!N<math>_2</math>-flow
Line 131: Line 131:
'''1%''' over the wafer (2015-04-24 BGHE)<br>
'''1%''' over the wafer (2015-04-24 BGHE)<br>
3.2% over the wafer [tested: 2014-03-18] ''Old shower head''
3.2% over the wafer [tested: 2014-03-18] ''Old shower head''
|-
|Stress
|not measured
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|}
|}


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