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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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|-
|-
|Depostion rate of Silicon Oxide
|Depostion rate of Silicon Oxide
|69nm/min - 119nm/min
|58nm/min - 78nm/min
|-
|-
|Non-uniformity of the deposition rate (std. deviation of 9 points)
|Non-uniformity of the deposition rate: ''(max-min)/2*AVG''
|0 - 2.8 nm
|<2%
|-
|-
|Refractive index of the Silicon Oxide
|Refractive index of the Silicon Oxide
|1.41 - 1.53
|1.45 - 1.48
|-
|-
|Non-uniformity of the refrative index (std. deviation of 9 points)
|Non-uniformity of the refrative index: ''(max-min)/2*AVG''
|0 - 0.07
|<0.2%
|-
|-
|}
|}
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