Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 30: Line 30:
|-  
|-  
|Pressure
|Pressure
|550 mTorr
|700 mTorr
|-
|-
|RF-power
|RF-power
|100 W @380kHz
|150 W @380kHz
|-
|-
|Deposition time
|Deposition time
|1 min
|15 min
|}
|}
| align="center" valign="top"|
| align="center" valign="top"|
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD"