Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 91: Line 91:
{| border="1" style="text-align: center; width: 700px; height: 150px;"
{| border="1" style="text-align: center; width: 700px; height: 150px;"
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1OX_old
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1OX_old
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1Oxide (A test recipe)
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1SiO2 (as QC)
|-
|-
!N<math>_2</math>-flow
!N<math>_2</math>-flow
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD"