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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 115: Line 115:
!Deposition rate
!Deposition rate
|~100 nm/min
|~100 nm/min
|´
|
'''66 nm/min''' (2015-05-18 BGHE)<br>
'''66 nm/min''' (2015-05-18 BGHE)<br>
'''68-69 nm/min''' (2015-04-24 BGHE)<br>
'''68-69 nm/min''' (2015-04-24 BGHE)<br>
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