Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
| Line 115: | Line 115: | ||
!Deposition rate | !Deposition rate | ||
|~100 nm/min | |~100 nm/min | ||
|109 ± 2 nm/min [tested: 2014-03-18] | | | ||
68-69 nm/min (2015-04-24 BGHE)<br> | |||
109 ± 2 nm/min [tested: 2014-03-18] | |||
|- | |- | ||
!index of refraction | !index of refraction | ||
| Line 123: | Line 125: | ||
!Uniformity | !Uniformity | ||
|<1 % | |<1 % | ||
|3.2% over the wafer [tested: 2014-03-18] | | | ||
1% over the wafer (2015-04-24 BGHE)<br> | |||
3.2% over the wafer [tested: 2014-03-18] | |||
|} | |} | ||