Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
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==BPSG: RI vs. B/P == | |||
B2H6 flow and PH3 flow was varied to map the RI of different B2H6/PH3 ratios. <br> | |||
''Work done by BGHE@danchip in fall 2013'' <br> | |||
{| border="1" cellspacing="0" cellpadding="7" | |||
|- | |||
|Recipe name | |||
|SiH4 flow [sccm] | |||
|N<sub>2</sub>O flow [sccm] | |||
|N2 flow [sccm] | |||
|B2H6 flow [sccm] | |||
|PH3 flow [sccm] | |||
|Pressure [mTorr] | |||
|Power [W] | |||
|Description | |||
|- | |||
|1PBSG | |||
|17 | |||
|1600 | |||
|0 | |||
|See below | |||
|See below | |||
|500 | |||
|800LF | |||
|BPSG glass for waveguide cladding layer | |||
|} | |||
LF=Low Frequency | |||
{| border="1" style="text-align: center; width: 400px; height: 150px;" | |||
|- | |||
|Run number | |||
|PH3 flow | |||
|B2H6 flow | |||
|B2H6/PH3 | |||
|RI | |||
|Thickness | |||
|- | |||
|A1 | |||
|40 sccm | |||
|135 sccm | |||
|3.38 | |||
|1.4582 | |||
|3.28 µm | |||
|- | |||
|A2 | |||
|55 sccm | |||
|115 sccm | |||
|2.09 | |||
|1.4615 | |||
|3.13 µm | |||
|- | |||
|A3 | |||
|45 sccm | |||
|130 sccm | |||
|2.89 | |||
|1.4590 | |||
|3.13 µm | |||
|- | |||
|A4 | |||
|35 sccm | |||
|140 sccm | |||
|4.0 | |||
|1.4572 | |||
|3.22 µm | |||
|- | |||
|A5 | |||
|50 sccm | |||
|120 sccm | |||
|2.4 | |||
|1.4602 | |||
|3.14 µm | |||
|- | |||
|} | |||
[[File:PECVD2_RI_vs_B-P_graph.jpg]] | |||
=Recipes on PECVD3 for deposition of silicon oxides= | =Recipes on PECVD3 for deposition of silicon oxides= | ||