Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
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==BPSG: RI vs. B/P == | ==BPSG: RI vs. B/P == | ||
{| border="1" cellspacing="0" cellpadding="7" | |||
|- | |||
|Recipe name | |||
|SiH4 flow [sccm] | |||
|N<sub>2</sub>O flow [sccm] | |||
|N2 flow [sccm] | |||
|B2H6 flow [sccm] | |||
|PH3 flow [sccm] | |||
|Pressure [mTorr] | |||
|Power [W] | |||
|Description | |||
|- | |||
|1PBSG | |||
|17 | |||
|1600 | |||
|0 | |||
|See below | |||
|See below | |||
|500 | |||
|800LF | |||
|BPSG glass for waveguide cladding layer | |||
|} | |||
LF=Low Frequency | |||
{| border="1" style="text-align: center; width: 400px; height: 150px;" | {| border="1" style="text-align: center; width: 400px; height: 150px;" | ||
|- | |- | ||