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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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==BPSG: RI vs. B/P ==
==BPSG: RI vs. B/P ==
{| border="1" style="text-align: center; width: 400px; height: 150px;"
|-
|Run number
|PH3 flow
|B2H6 flow
|B2H6/PH3
|RI
|Thickness
|-
|A1
|40 sccm
|135 sccm
|3.38
|1.4582
|3.28 µm
|-
|A2
|55 sccm
|115 sccm
|2.09
|1.4615
|3.13 µm
|-
|A3
|45 sccm
|130 sccm
|2.89
|1.4590
|3.13 µm
|-
|A4
|35 sccm
|140 sccm
|4.0
|1.4572
|3.22 µm
|-
|A5
|50 sccm
|120 sccm
|2.4
|1.4602
|3.14 µm
|-
|}


=Recipes on PECVD3 for deposition of doped oxide=
=Recipes on PECVD3 for deposition of doped oxide=
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