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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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At the moment DANCHIP has 2(3) PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 has been decommissioned and PECVD3 are for silicon based processing allowing wafers with small abount of metal (<5% wafer coverage). PECVD2 is for clean wafers both for silicon based materials and for III-V materials. At the moment PECVD2 is described under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD2 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
At the moment DANCHIP has 2(3) PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 has been decommissioned and PECVD3 are for silicon based processing allowing wafers with small abount of metal (<5% wafer coverage). PECVD2 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD2 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system.


=Recipes on PECVD2 for deposition of silicon oxides=
=Recipes on PECVD2 for deposition of silicon oxides=