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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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! QC Recipe:
! QC Recipe:
! QCOXIDE
! QCOXYD
|-  
|-  
| SiH<sub>4</sub> flow
| SiH<sub>4</sub> flow
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{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!QC limits
!RIE1
!PECVD3 - OXIDE
!RIE2
|-
|-
|Etch rate in Si
|Deposition rate
|0.2 - 0.6 µm/min
|66 - 89 nm/min
|0.2 - 0.6 µm/min
|-
|-
|Non-uniformity
|Non-uniformity
|2 - 5 %
|? %
|2 - 5 %
|-
|Refractive index
|1.472 - 1.487
|-
|-
|}
|}
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