Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 118: Line 118:
! QCOXIDE
! QCOXIDE
|-  
|-  
| SF<sub>6</sub> flow
| SiH<sub>4</sub> flow
|32 sccm
|12 sccm
|-
|-
|O<sub>2</sub> flow
|N<sub>2</sub>O flow
|8 sccm
|1420 sccm
|-
|N<sub>2</sub> flow
|392 sccm
 
|-  
|-  
|Pressure
|Pressure
|80 mTorr
|550 mTorr
|-
|-
|RF-power
|RF-power
|30 W
|60 W
|-
|Etch Load
|50%
|-
|-
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD"