Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
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There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized. | There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized. | ||
{| border="1" cellspacing="1" cellpadding="2" style="text-align:center;" ||3||4||5 | {| border="1" cellspacing="1" cellpadding="2" style="text-align:center;" width="1000" ||3||4||5 | ||
|Run #||Temperature||Process time with POCl<sub>3</sub>||Anneal time in N<sub>2</sub>||Wafer # | |Run #||Temperature||Process time with POCl<sub>3</sub>||Anneal time in N<sub>2</sub>||Wafer # | ||
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