Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
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There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized. | There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized. | ||
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|Run #||Temperature||Process time with POCl<sub>3</sub>||Anneal time in N<sub>2</sub>||Wafer # | |Run #||Temperature||Process time with POCl<sub>3</sub>||Anneal time in N<sub>2</sub>||Wafer # | ||
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====Test measurement==== | ====Test measurement==== | ||
''' | ''' | ||
There was made several measurement on the different wafer in the process. After the | There was made several measurement on the different wafer in the process. After the Predep was the Phosphorus glass layer thickness measured and the sheet resistance and slice resistivity measured on the same after a BHF etch. | ||
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! | ! | ||
! colspan="2" | Elipsometer | ! colspan="2" | Elipsometer | ||
! colspan="2" | Four Point Probe | ! colspan="2" | Four Point Probe | ||
|- | |- | ||
! width=" | ! width="130" | Wafer # | ||
! width=" | ! width="130" | Thinkness [nm] | ||
! width=" | ! width="130" | Refrative index | ||
! width=" | ! width="150" | Sheet resistance [Ω<sub>sq</sub>] | ||
! width=" | ! width="150" | Slice Resistivity [Ωcm] | ||
|- | |- | ||
! 3 | ! 3 | ||