Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
| Line 14: | Line 14: | ||
|- | |- | ||
|1oxide | |1oxide | ||
| | |17 | ||
| | |1600 | ||
| | |0 | ||
| | |400 | ||
| | |380LF | ||
| | |Developed for waveguides | ||
|- | |- | ||
|} | |} | ||
Revision as of 15:08, 28 November 2007
At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD1 for deposition of silicon oxydes
Recipes
| Recipe name | SiH4 flow [sccm] | NO flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1oxide | 17 | 1600 | 0 | 400 | 380LF | Developed for waveguides |
Expected results
| Recipe name | Deposition rate [nm/min] | RI | Uniformity [%] |
| 1oxide | ~193 | 1.46 | 2 |
Recipes on PECVD3 for deposition of silicon oxides
Recipes
| Recipe name | SiH4 flow [sccm] | NO flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| LFSiO | 12 | 1420 | 392 | 550 | 60 |
LF=Low Frequency
Expected results
| Recipe name | Deposition rate [nm/min] | RI | Uniformity [%] |
| LFSiO | ~81 | ~1.48 | <1 |