Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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If a larger area is to be etched, the cooling must be made more efficient, either by lowering the platen temperature or with increasing the pressure of He on the backside of the wafer. This will be investigated soon. | If a larger area is to be etched, the cooling must be made more efficient, either by lowering the platen temperature or with increasing the pressure of He on the backside of the wafer. This will be investigated soon. | ||
=== Results: Etched depths in trenches of different widths === | |||
<gallery caption="Graphs" widths="250" heights="200" perrow="3"> | |||
image:PegProcessA110cycles.jpg| Process time 10:05 | |||
image:PegProcessA55cycles.jpg| Process time 20:10 | |||
</gallery> | |||