Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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image:C01549.04-A.jpg|Wafer C01549.04: 35 % exposed area | image:C01549.04-A.jpg|Wafer C01549.04: 35 % exposed area | ||
image:C01549.04-B.jpg|Wafer C01549.05: 35 % exposed area (close-up) | image:C01549.04-B.jpg|Wafer C01549.05: 35 % exposed area (close-up) | ||
The etching of silicon releases energy. The faster the etch is, the more heat needs to be dissipated. Similarly, the larger a percentage of the wafer is etched, the more heat must be dissipated. Process A is the fastest etch and as seen here, the exposed area also plays an important role. | |||
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