Specific Process Knowledge/Thermal Process: Difference between revisions

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*[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep''
*[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep''
*[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers''  
*[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers''  
*[[/C1 Anneal Oxide furnace|C1 Anneal Oxide furnace]] - ''For oxidation and annealing, up to 6" wafer''
*[[/C1 Anneal oxide furnace|C1 Anneal Oxide furnace]] - ''For oxidation and annealing, up to 6" wafer''
*[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For growing of Gate Oxide on new wafers''
*[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For growing of Gate Oxide on new wafers''
*[[/C3 Anneal Bond furnace|C3 Anneal Bond furnace]] - ''For annealing and annealing of bonded wafers''
*[[/C3 Anneal Bond furnace|C3 Anneal Bond furnace]] - ''For annealing and annealing of bonded wafers''

Revision as of 09:01, 30 November 2012

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