Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions
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==A4 Furnace Phosphor | ==A4 Furnace Phosphor Pre-dep== | ||
[[Image:A4.JPG|thumb|300x300px|A4 | [[Image:A4.JPG|thumb|300x300px|A4 Phosphor Pre-dep furnace. Positioned in cleanroom 2]] | ||
The A4 | The A4 Phosphor pre-dep furnace is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl<sub>3</sub>. | ||
A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the C2 | A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the C2 Gate Oxide furnace are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates are allowed to enter this furnace. Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart]. | ||
'''The user manual, technical information and contact information can be found in LabManager:''' | '''The user manual, technical information and contact information can be found in LabManager:''' | ||