Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions

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!style="background:silver; color:black;" align="left"|Purpose  
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Deposition of TEOS - Silicon dioxide based on tetraethoxysilane  
Deposition of TEOS - Silicon dioxide based on tetraethoxysilane  
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
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*Few defects
*Few defects
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*O<math>_2</math>: 30 sccm
*O<math>_2</math>: 30 sccm
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| style="background:LightGrey; color:black"|Substrate material allowed
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*Silicon wafers (only clean wafers)
*Silicon wafers (only clean wafers and RCA cleaned)
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
**from furnaces in stack A or B in cleanroom 2  
**from furnaces in stack A or B in cleanroom 2  

Revision as of 14:19, 28 November 2012

LPCVD (Low Pressure Chemical Vapor Deposition) TEOS

B3 Furnace LPCVD TEOS. Positioned in cleanroom 2

Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.

TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 725 oC. It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance.

The LPCVD TEOS has a excellent step coverage and is very good for trench filling. The film thickness is very uniform over the wafer.

The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:

Bor Drive-in

Process Knowledge

Please take a look at the process side for deposition of TEOS oxide: Deposition of TEOS using LPCVD


Overview of the performance of the LPCVD TEOS furnace and some process related parameters

Purpose

Deposition of TEOS - Silicon dioxide based on tetraethoxysilane

Performance Film thickness
  • 0 nm - 2000 nm
Step coverage
  • Good
Film quality
  • Dense film
  • Few defects
Process parameter range Process Temperature
  • 725 oC
Process pressure
  • 190 mTorr
Gas flows
  • TEOS: 50 sccm
  • O: 30 sccm
Substrates Batch size
  • 1-15 4" wafers per run
  • Deposition on both sides of the substrate
Substrate material allowed
  • Silicon wafers (only clean wafers and RCA cleaned)
    • with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
    • from furnaces in stack A or B in cleanroom 2
  • Quartz wafers (RCA cleaned)