Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time. | Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time. | ||
TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 725 | TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 725 <sup>o</sup>C. It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance. | ||
The LPCVD TEOS has a excellent step coverage and is very good for trench filling. The film thickness is very uniform over the wafer. | The LPCVD TEOS has a excellent step coverage and is very good for trench filling. The film thickness is very uniform over the wafer. | ||