Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions
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[[Image:A4.JPG|thumb|300x300px|A4 Phosphorus pre-dep furnace: positioned in cleanroom 2]] | [[Image:A4.JPG|thumb|300x300px|A4 Phosphorus pre-dep furnace: positioned in cleanroom 2]] | ||
A4 is | The A4 Furnace Phosphor pre-dep is used to dope Si wafers with Phosphor to make conductive structures, etch stop layers etc. The doping source is Phosphoryl chloride (commonly called phosphorus oxychloride) that is a colourless liquid with the formula POCl<sub>3</sub>. | ||
A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with | A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the C2 Furnace Gate oxide are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates are allowed to enter this furnace. Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart]. | ||
'''The user manual | '''The user manual, technical information and contact information can be found in LabManager:''' | ||
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=47 Phosphor Pre-dep]''' | '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=47 Furnace A4: Phosphor Pre-dep]''' | ||
== Process knowledge == | == Process knowledge == | ||