Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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*Less good | *Less good | ||
*When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation. | *When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation. | ||
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*Incorporation of hydrogen in the film | *Incorporation of hydrogen in the film | ||
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|Batch size | |Batch size | ||