Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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==Deposition of Silicon Oxide using LPCVD== | ==Deposition of Silicon Oxide using LPCVD== | ||
The LPCVD oxide you can deposit at DANCHIP is called TEOS oxide. It can be made in the [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD TEOS furnace]]. It is a batch process meaning you can run a batch of | The LPCVD oxide you can deposit at DANCHIP is called TEOS oxide. It can be made in the [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD TEOS furnace]]. It is a batch process meaning you can run a batch of 13 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The TEOS oxide has good step coverage and hole filing/covering properties and the film thickness is very uniform over the wafer. We have two standard TEOS processes: One for depositing standard layers ~(0-1.5 µm) and one for deposition thick layers ~(1.5µm-4µm). The TEOS oxide has a dielectric constant very close to the one for thermal oxide (3.65 for TEOS). | ||
==Deposition of Silicon Oxide using PECVD== | ==Deposition of Silicon Oxide using PECVD== | ||